Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

1077-3118

AIP Digital Archive

Physics

We report on the growth of GaN with a zinc-blende, wurtzite, or a mixed phase structure on (001)GaP and (001)GaAs substrates by a low-temperature modified molecular beam epitaxy technique. By systematically varying the incident arsenic overpressure, films grown at a moderate substrate temperature of ≈620 °C show predominately wurtzite α-GaN, zinc-blende β-GaN, or a mixed phase of the two. Films containing only the metastable phase β-GaN were achieved by using a relatively high growth temperature of ≈700 °C and with an arsenic overpressure of ≈2.4×10−5 Torr. X-ray diffraction measurements indicate an improved crystalline quality for the layers grown at ≈700 °C compared to those grown at ≈620 °C as evident by a narrower full width at half-maximum of 35 min for β-GaN, which is among the narrowest reported to date. © 1995 American Institute of Physics.

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