AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
Chen, E. I. ; Holonyak, N. ; Maranowski, S. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Data are presented demonstrating a GaAs-based metal–oxide semiconductor field effect transistor employing in the gate region a laterally formed native oxide of AlAs. The gate oxide, formed by a water vapor process, is similar to that used successfully in recently developed semiconductor laser devices. The transistors described here represent an extension of the "wet'' oxidation Al-based III–V native oxide technology employed successfully in light-emitting and laser devices. © 1995 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |