Nonlinear polarization switching in a semiconductor single quantum well optical amplifier
Lin, Ming-Shan ; Huang, Ding-Wei ; Yang, C. C. ; Hong, Minghwei ; Chen, Young-Kai
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Efficient nonlinear or power-dependent polarization switching in a semiconductor quantum-well amplifier is reported. In the experiment, an amplifier with an InGaAs/GaAs single quantum well structure which lases at 974 nm is used. Efficient self-switching is observed at 940 nm with signals 3 psec wide when gain and absorption saturation occur in the TM and TE polarization modes, respectively. The switching peak intensity is estimated to be lower than 13.2 MW/cm2. A theoretical model is adopted to show the consistent trends of switching behaviors with the experimental data. © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |