Direct observation of precipitates and self-organized nanostructures in molecular-beam epitaxy grown heavily doped GaAs:Si
Gwo, S. ; Miwa, S. ; Ohno, H. ; Fan, J.-F. ; Tokumoto, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report a cross-sectional scanning tunneling microscopy investigation of heavily Si doped [001]-oriented GaAs grown by molecular-beam epitaxy. At a very high doping level (6×1019 cm−3), Si-doping induced precipitates are directly observed in XSTM images of the as-grown epitaxial layers. Most of the precipitates are found to have a characteristic oval shape with the long axis (∼80 A(ring)) along the growth direction. In contrast to the low diffusivity of randomly distributed Si dopants in the moderate doping regime, these precipitates are found to be highly mobile and spontaneously form "nanowires'' during crystal growth. © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |