Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal
Shekhawat, G. S. ; Gupta, Ram P. ; Agarwal, A. ; Vyas, P. D. ; Srivastava, P. ; Saini, N. L. ; Venkatesh, S. ; Garg, K. B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Effects arising from the intercalation of excess oxygen in Bi–O layer has been observed at room temperature using atomic force microscopy. The excess oxygen is incorporated by oxygenating the pure sample. The oxygen is trapped between the alternating Bi–O layers along the b direction. This leads to a change in the local interatomic bond length along the b axis, while the periodicity remained invariant along the a axis. In addition, in-plane atomically resolved structure of single crystal has been imaged at room temperature using AFM. The lattice spacings indicate that the observed structure corresponds to the in-plane bismuth and oxygen positions. Furthermore, high-resolution scanning tunneling spectroscopy measurements show that oxygen doping increases the Bi–O layer density of states near the Fermi level giving rise to metallicity, whereas the pure sample reveals a semiconducting energy gap in the tunneling spectrum. © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289618827739136 |
|---|---|
| autor | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. |
| autorsonst | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. |
| book_url | http://dx.doi.org/10.1063/1.115241 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218170793 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Effects arising from the intercalation of excess oxygen in Bi–O layer has been observed at room temperature using atomic force microscopy. The excess oxygen is incorporated by oxygenating the pure sample. The oxygen is trapped between the alternating Bi–O layers along the b direction. This leads to a change in the local interatomic bond length along the b axis, while the periodicity remained invariant along the a axis. In addition, in-plane atomically resolved structure of single crystal has been imaged at room temperature using AFM. The lattice spacings indicate that the observed structure corresponds to the in-plane bismuth and oxygen positions. Furthermore, high-resolution scanning tunneling spectroscopy measurements show that oxygen doping increases the Bi–O layer density of states near the Fermi level giving rise to metallicity, whereas the pure sample reveals a semiconducting energy gap in the tunneling spectrum. © 1995 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1995 |
| publikationsjahr_facette | 1995 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1995 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 67 (1995), S. 3343-3345 |
| search_space | articles |
| shingle_author_1 | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. |
| shingle_author_2 | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. |
| shingle_author_3 | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. |
| shingle_author_4 | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. |
| shingle_catch_all_1 | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal Effects arising from the intercalation of excess oxygen in Bi–O layer has been observed at room temperature using atomic force microscopy. The excess oxygen is incorporated by oxygenating the pure sample. The oxygen is trapped between the alternating Bi–O layers along the b direction. This leads to a change in the local interatomic bond length along the b axis, while the periodicity remained invariant along the a axis. In addition, in-plane atomically resolved structure of single crystal has been imaged at room temperature using AFM. The lattice spacings indicate that the observed structure corresponds to the in-plane bismuth and oxygen positions. Furthermore, high-resolution scanning tunneling spectroscopy measurements show that oxygen doping increases the Bi–O layer density of states near the Fermi level giving rise to metallicity, whereas the pure sample reveals a semiconducting energy gap in the tunneling spectrum. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal Effects arising from the intercalation of excess oxygen in Bi–O layer has been observed at room temperature using atomic force microscopy. The excess oxygen is incorporated by oxygenating the pure sample. The oxygen is trapped between the alternating Bi–O layers along the b direction. This leads to a change in the local interatomic bond length along the b axis, while the periodicity remained invariant along the a axis. In addition, in-plane atomically resolved structure of single crystal has been imaged at room temperature using AFM. The lattice spacings indicate that the observed structure corresponds to the in-plane bismuth and oxygen positions. Furthermore, high-resolution scanning tunneling spectroscopy measurements show that oxygen doping increases the Bi–O layer density of states near the Fermi level giving rise to metallicity, whereas the pure sample reveals a semiconducting energy gap in the tunneling spectrum. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal Effects arising from the intercalation of excess oxygen in Bi–O layer has been observed at room temperature using atomic force microscopy. The excess oxygen is incorporated by oxygenating the pure sample. The oxygen is trapped between the alternating Bi–O layers along the b direction. This leads to a change in the local interatomic bond length along the b axis, while the periodicity remained invariant along the a axis. In addition, in-plane atomically resolved structure of single crystal has been imaged at room temperature using AFM. The lattice spacings indicate that the observed structure corresponds to the in-plane bismuth and oxygen positions. Furthermore, high-resolution scanning tunneling spectroscopy measurements show that oxygen doping increases the Bi–O layer density of states near the Fermi level giving rise to metallicity, whereas the pure sample reveals a semiconducting energy gap in the tunneling spectrum. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Shekhawat, G. S. Gupta, Ram P. Agarwal, A. Vyas, P. D. Srivastava, P. Saini, N. L. Venkatesh, S. Garg, K. B. Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal Effects arising from the intercalation of excess oxygen in Bi–O layer has been observed at room temperature using atomic force microscopy. The excess oxygen is incorporated by oxygenating the pure sample. The oxygen is trapped between the alternating Bi–O layers along the b direction. This leads to a change in the local interatomic bond length along the b axis, while the periodicity remained invariant along the a axis. In addition, in-plane atomically resolved structure of single crystal has been imaged at room temperature using AFM. The lattice spacings indicate that the observed structure corresponds to the in-plane bismuth and oxygen positions. Furthermore, high-resolution scanning tunneling spectroscopy measurements show that oxygen doping increases the Bi–O layer density of states near the Fermi level giving rise to metallicity, whereas the pure sample reveals a semiconducting energy gap in the tunneling spectrum. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal |
| shingle_title_2 | Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal |
| shingle_title_3 | Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal |
| shingle_title_4 | Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:41.499Z |
| titel | Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal |
| titel_suche | Observation of intercalation of excess oxygen in Bi2Sr2CaCu2O8+y single crystal |
| topic | U |
| uid | nat_lic_papers_NLZ218170793 |