Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure
Wu, J. ; Li, W. ; Fan, T. W. ; Wang, Z. G. ; Duan, X. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289618905333762 |
|---|---|
| autor | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. |
| autorsonst | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. |
| book_url | http://dx.doi.org/10.1063/1.115524 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218166923 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1995 |
| publikationsjahr_facette | 1995 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1995 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 67 (1995), S. 846-847 |
| search_space | articles |
| shingle_author_1 | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. |
| shingle_author_2 | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. |
| shingle_author_3 | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. |
| shingle_author_4 | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. |
| shingle_catch_all_1 | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Wu, J. Li, W. Fan, T. W. Wang, Z. G. Duan, X. F. Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |
| shingle_title_2 | Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |
| shingle_title_3 | Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |
| shingle_title_4 | Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:41.406Z |
| titel | Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |
| titel_suche | Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |
| topic | U |
| uid | nat_lic_papers_NLZ218166923 |