Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)
Okuno, Y. ; Aoki, M. ; Tsuchiya, T. ; Uomi, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We examine the direct bonding of (001) InP and (110) GaAs and demonstrate its application to device fabrication. Cross-sectional observation shows that these wafers can be united without generating dislocation. (001) InP-based 1.55-μm wavelength lasers are fabricated on (110) GaAs. The light–current characteristics of the lasers are almost identical to those of lasers fabricated on (001) GaAs, while the turn-on voltage is higher by about 0.4 V due to the large band discontinuity. The results show that the direct bonding technique is promising for allowing new concept "free-orientation integration.'' © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |