Plasma-deposited silylation resist for 193 nm lithography
Horn, Mark W. ; Rothschild, Mordechai ; Maxwell, Brian E. ; Goodman, Russell B. ; Kunz, Roderick R. ; Eriksen, Lynn M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Plasma-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 μm have been obtained with a 0.35 numerical aperture projection system. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |