Unconnected junction contrast in ion beam induced charge microscopy

Kolachina, S. ; Ong, V. K. S. ; Chan, D. S. H. ; Phang, J. C. H. ; Osipowicz, T. ; Watt, F.

Woodbury, NY : American Institute of Physics (AIP)
Published 1996
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new contrast mechanism in ion beam induced charge imaging in semiconductors is reported. Junctions not directly connected to the charge collection preamplifier were found to give rise to significant charge collection signals. Imaging with these signals is carried out, thus enabling the mapping of junctions not directly connected to the charge collection amplifier. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL: