Ultrathin oxides using N2O on strained Si1−xGex layers
Mukhopadhyay, M. ; Ray, S. K. ; Nayak, D. K. ; Maiti, C. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Microwave N2O plasma oxidation of strained Si1−xGex layers at low temperature (〈200 °C) is reported. The hole confinement in accumulation in a metal oxide semiconductor (MOS)-gated SiGe/Si heterostructure has been confirmed by both simulation and experiments. Electrical properties are also discussed. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |