Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy
Chen, H. ; Han, P. ; Huang, X. D. ; Hu, L. Q. ; Shi, Y. ; Zheng, Y. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
In this letter, we report a semiconducting Ge–Si–Fe alloy thin film grown on Si(100) by reactive deposition epitaxy using high vacuum evaporation technique. This work is based on the idea that the band structure of β-FeSi2 will be changed with part of the Si atoms in the lattice replaced by Ge atoms. An iron film was first deposited on a SiGe/Si(100) structure, then the alloy was formed during an annealing process. Auger electron spectroscopy and x-ray diffraction results indicate that the new alloy film can be regarded as a distorted β-FeSi2 thin film with the participation of Ge. The direct band gap of the Ge–Si–Fe alloy is determined to be 0.83 eV by optical transmission measurements, which indicate a redshift of the band gap with regard to that of β-FeSi2 (Eg=0.87 eV) thin films. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289615304523776 |
|---|---|
| autor | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. |
| autorsonst | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. |
| book_url | http://dx.doi.org/10.1063/1.117619 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218150377 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | In this letter, we report a semiconducting Ge–Si–Fe alloy thin film grown on Si(100) by reactive deposition epitaxy using high vacuum evaporation technique. This work is based on the idea that the band structure of β-FeSi2 will be changed with part of the Si atoms in the lattice replaced by Ge atoms. An iron film was first deposited on a SiGe/Si(100) structure, then the alloy was formed during an annealing process. Auger electron spectroscopy and x-ray diffraction results indicate that the new alloy film can be regarded as a distorted β-FeSi2 thin film with the participation of Ge. The direct band gap of the Ge–Si–Fe alloy is determined to be 0.83 eV by optical transmission measurements, which indicate a redshift of the band gap with regard to that of β-FeSi2 (Eg=0.87 eV) thin films. © 1996 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1996 |
| publikationsjahr_facette | 1996 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1996 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 69 (1996), S. 1912-1914 |
| search_space | articles |
| shingle_author_1 | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. |
| shingle_author_2 | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. |
| shingle_author_3 | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. |
| shingle_author_4 | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. |
| shingle_catch_all_1 | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy In this letter, we report a semiconducting Ge–Si–Fe alloy thin film grown on Si(100) by reactive deposition epitaxy using high vacuum evaporation technique. This work is based on the idea that the band structure of β-FeSi2 will be changed with part of the Si atoms in the lattice replaced by Ge atoms. An iron film was first deposited on a SiGe/Si(100) structure, then the alloy was formed during an annealing process. Auger electron spectroscopy and x-ray diffraction results indicate that the new alloy film can be regarded as a distorted β-FeSi2 thin film with the participation of Ge. The direct band gap of the Ge–Si–Fe alloy is determined to be 0.83 eV by optical transmission measurements, which indicate a redshift of the band gap with regard to that of β-FeSi2 (Eg=0.87 eV) thin films. © 1996 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy In this letter, we report a semiconducting Ge–Si–Fe alloy thin film grown on Si(100) by reactive deposition epitaxy using high vacuum evaporation technique. This work is based on the idea that the band structure of β-FeSi2 will be changed with part of the Si atoms in the lattice replaced by Ge atoms. An iron film was first deposited on a SiGe/Si(100) structure, then the alloy was formed during an annealing process. Auger electron spectroscopy and x-ray diffraction results indicate that the new alloy film can be regarded as a distorted β-FeSi2 thin film with the participation of Ge. The direct band gap of the Ge–Si–Fe alloy is determined to be 0.83 eV by optical transmission measurements, which indicate a redshift of the band gap with regard to that of β-FeSi2 (Eg=0.87 eV) thin films. © 1996 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy In this letter, we report a semiconducting Ge–Si–Fe alloy thin film grown on Si(100) by reactive deposition epitaxy using high vacuum evaporation technique. This work is based on the idea that the band structure of β-FeSi2 will be changed with part of the Si atoms in the lattice replaced by Ge atoms. An iron film was first deposited on a SiGe/Si(100) structure, then the alloy was formed during an annealing process. Auger electron spectroscopy and x-ray diffraction results indicate that the new alloy film can be regarded as a distorted β-FeSi2 thin film with the participation of Ge. The direct band gap of the Ge–Si–Fe alloy is determined to be 0.83 eV by optical transmission measurements, which indicate a redshift of the band gap with regard to that of β-FeSi2 (Eg=0.87 eV) thin films. © 1996 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Chen, H. Han, P. Huang, X. D. Hu, L. Q. Shi, Y. Zheng, Y. D. Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy In this letter, we report a semiconducting Ge–Si–Fe alloy thin film grown on Si(100) by reactive deposition epitaxy using high vacuum evaporation technique. This work is based on the idea that the band structure of β-FeSi2 will be changed with part of the Si atoms in the lattice replaced by Ge atoms. An iron film was first deposited on a SiGe/Si(100) structure, then the alloy was formed during an annealing process. Auger electron spectroscopy and x-ray diffraction results indicate that the new alloy film can be regarded as a distorted β-FeSi2 thin film with the participation of Ge. The direct band gap of the Ge–Si–Fe alloy is determined to be 0.83 eV by optical transmission measurements, which indicate a redshift of the band gap with regard to that of β-FeSi2 (Eg=0.87 eV) thin films. © 1996 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy |
| shingle_title_2 | Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy |
| shingle_title_3 | Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy |
| shingle_title_4 | Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:39.096Z |
| titel | Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy |
| titel_suche | Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy |
| topic | U |
| uid | nat_lic_papers_NLZ218150377 |