Double injection and negative resistance in stripe-geometry oxide-aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodes
Wierer, J. J. ; Maranowski, S. A. ; Holonyak, N. ; Evans, P. W. ; Chen, E. I.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Data are presented demonstrating double injection and negative resistance in stripe-geometry oxide-aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure lasers. The buried oxide laser structures are defined, in current and cavity, by laterally oxidizing the higher Al composition upper and lower cladding layers from a mesa edge (a ridge), thus, forming a narrow oxide-defined buried aperture (∼2μm). Post fabrication annealing (425 °C in N2) removes the negative resistance, indicating that the crystal growth and oxidation processes introduce products such as H and OH in the active region that compensate the dopants. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |