Faraday–Stark optoelectronic effect
Lee, Z. K. ; Heiman, D. ; Wang, H. ; Fonstad, C. G. ; Sundaram, M. ; Gossard, A. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
An optoelectronic effect based on Faraday or Kerr rotation and the quantum-confined Stark shift is demonstrated. It is novel in that the degree of rotation is controlled by an electric field as opposed to a magnetic field. By applying an electric field to a quantum well structure, the Faraday rotation can be tuned into resonance, thereby varying the rotation angle of plane polarized light. We have observed a resonant rotation of 10° in GaAs at a magnetic field of 1 T. By applying a gate voltage of 2 V to a GaAs/AlGaAs superlattice structure, we observed a change in rotation of 1.3° at 2 K. The Faraday–Stark effect could be useful in electrically controlled light switches and high-speed optical modulators. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |