PtSi–n–Si Schottky-barrier photodetectors with stable spectral responsivity in the 120–250 nm spectral range
Solt, K. ; Melchior, H. ; Kroth, U. ; Kuschnerus, P. ; Persch, V. ; Rabus, H. ; Richter, M. ; Ulm, G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
ISSN: |
1077-3118
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Source: |
AIP Digital Archive
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Topics: |
Physics
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Notes: |
Front-illuminated PtSi–n–Si Schottky barrier photodiodes have been developed for the ultraviolet and vacuum ultraviolet spectral range. Their spectral responsivity was determined in the 120–500 nm spectral range by use of a cryogenic electrical substitution radiometer operated with spectrally dispersed synchrotron radiation. For wavelengths below 250 nm, the spectral responsivity is about 0.03 A/W, comparable to that of GaAsP Schottky photodiodes. Unlike the GaAsP diodes, the new PtSi–n–Si diodes have a spatially uniform response which is virtually stable after prolonged exposure to short wavelength radiation. Even after a radiant exposure of 150 mJ cm−2 at wavelength 120 nm, the relative reduction in spectral responsivity remains below 0.2%. Due to these features, this type of photodiode is a promising candidate for use as secondary detector standard in the ultraviolet and vacuum ultraviolet spectral ranges. © 1996 American Institute of Physics.
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Type of Medium: |
Electronic Resource
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URL: |