Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Hydrogen passivation of Zn acceptors and Zn–H dissociation kinetics are compared for homoepitaxial and lattice-mismatched heteroepitaxial n+p InP structures. Doping profile measurements show a pronounced increase in the depth and degree of passivation in the p-type region of the heteroepitaxial samples indicating enhanced diffusion of hydrogen along dislocations, followed by additional Zn deactivation. Moreover, the strong affinity between hydrogen and extended defects is found to aid the subsequent dissociation of the Zn–H complexes as indicated by (i) reverse bias annealing (RBA) studies which show that the Zn–H dissociation energy decreases from 1.19 eV in homoepitaxial samples to 1.12 eV in heteroepitaxial samples, and (ii) enhanced passivation of extended defect-related traps by hydrogen that is liberated from Zn acceptors during the RBA process as determined by deep level transient spectroscopy. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289614310473728 |
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| autor | Chatterjee, B. Ringel, S. A. |
| autorsonst | Chatterjee, B. Ringel, S. A. |
| book_url | http://dx.doi.org/10.1063/1.117909 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218141459 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Hydrogen passivation of Zn acceptors and Zn–H dissociation kinetics are compared for homoepitaxial and lattice-mismatched heteroepitaxial n+p InP structures. Doping profile measurements show a pronounced increase in the depth and degree of passivation in the p-type region of the heteroepitaxial samples indicating enhanced diffusion of hydrogen along dislocations, followed by additional Zn deactivation. Moreover, the strong affinity between hydrogen and extended defects is found to aid the subsequent dissociation of the Zn–H complexes as indicated by (i) reverse bias annealing (RBA) studies which show that the Zn–H dissociation energy decreases from 1.19 eV in homoepitaxial samples to 1.12 eV in heteroepitaxial samples, and (ii) enhanced passivation of extended defect-related traps by hydrogen that is liberated from Zn acceptors during the RBA process as determined by deep level transient spectroscopy. © 1996 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1996 |
| publikationsjahr_facette | 1996 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1996 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 69 (1996), S. 839-841 |
| search_space | articles |
| shingle_author_1 | Chatterjee, B. Ringel, S. A. |
| shingle_author_2 | Chatterjee, B. Ringel, S. A. |
| shingle_author_3 | Chatterjee, B. Ringel, S. A. |
| shingle_author_4 | Chatterjee, B. Ringel, S. A. |
| shingle_catch_all_1 | Chatterjee, B. Ringel, S. A. Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers Hydrogen passivation of Zn acceptors and Zn–H dissociation kinetics are compared for homoepitaxial and lattice-mismatched heteroepitaxial n+p InP structures. Doping profile measurements show a pronounced increase in the depth and degree of passivation in the p-type region of the heteroepitaxial samples indicating enhanced diffusion of hydrogen along dislocations, followed by additional Zn deactivation. Moreover, the strong affinity between hydrogen and extended defects is found to aid the subsequent dissociation of the Zn–H complexes as indicated by (i) reverse bias annealing (RBA) studies which show that the Zn–H dissociation energy decreases from 1.19 eV in homoepitaxial samples to 1.12 eV in heteroepitaxial samples, and (ii) enhanced passivation of extended defect-related traps by hydrogen that is liberated from Zn acceptors during the RBA process as determined by deep level transient spectroscopy. © 1996 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Chatterjee, B. Ringel, S. A. Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers Hydrogen passivation of Zn acceptors and Zn–H dissociation kinetics are compared for homoepitaxial and lattice-mismatched heteroepitaxial n+p InP structures. Doping profile measurements show a pronounced increase in the depth and degree of passivation in the p-type region of the heteroepitaxial samples indicating enhanced diffusion of hydrogen along dislocations, followed by additional Zn deactivation. Moreover, the strong affinity between hydrogen and extended defects is found to aid the subsequent dissociation of the Zn–H complexes as indicated by (i) reverse bias annealing (RBA) studies which show that the Zn–H dissociation energy decreases from 1.19 eV in homoepitaxial samples to 1.12 eV in heteroepitaxial samples, and (ii) enhanced passivation of extended defect-related traps by hydrogen that is liberated from Zn acceptors during the RBA process as determined by deep level transient spectroscopy. © 1996 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Chatterjee, B. Ringel, S. A. Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers Hydrogen passivation of Zn acceptors and Zn–H dissociation kinetics are compared for homoepitaxial and lattice-mismatched heteroepitaxial n+p InP structures. Doping profile measurements show a pronounced increase in the depth and degree of passivation in the p-type region of the heteroepitaxial samples indicating enhanced diffusion of hydrogen along dislocations, followed by additional Zn deactivation. Moreover, the strong affinity between hydrogen and extended defects is found to aid the subsequent dissociation of the Zn–H complexes as indicated by (i) reverse bias annealing (RBA) studies which show that the Zn–H dissociation energy decreases from 1.19 eV in homoepitaxial samples to 1.12 eV in heteroepitaxial samples, and (ii) enhanced passivation of extended defect-related traps by hydrogen that is liberated from Zn acceptors during the RBA process as determined by deep level transient spectroscopy. © 1996 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Chatterjee, B. Ringel, S. A. Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers Hydrogen passivation of Zn acceptors and Zn–H dissociation kinetics are compared for homoepitaxial and lattice-mismatched heteroepitaxial n+p InP structures. Doping profile measurements show a pronounced increase in the depth and degree of passivation in the p-type region of the heteroepitaxial samples indicating enhanced diffusion of hydrogen along dislocations, followed by additional Zn deactivation. Moreover, the strong affinity between hydrogen and extended defects is found to aid the subsequent dissociation of the Zn–H complexes as indicated by (i) reverse bias annealing (RBA) studies which show that the Zn–H dissociation energy decreases from 1.19 eV in homoepitaxial samples to 1.12 eV in heteroepitaxial samples, and (ii) enhanced passivation of extended defect-related traps by hydrogen that is liberated from Zn acceptors during the RBA process as determined by deep level transient spectroscopy. © 1996 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers |
| shingle_title_2 | Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers |
| shingle_title_3 | Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers |
| shingle_title_4 | Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:38.200Z |
| titel | Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers |
| titel_suche | Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p-type InP layers |
| topic | U |
| uid | nat_lic_papers_NLZ218141459 |