High resolution ion scattering study of silicon oxynitridation
Lu, H. C. ; Gusev, E. P. ; Gustafsson, T. ; Garfunkel, E. ; Green, M. L. ; Brasen, D. ; Feldman, L. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface. Oxynitridation in N2O results in a lower concentration and a broader distribution of nitrogen than in the NO case. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |