In situ optical second-harmonic-generation monitoring of disilane adsorption and hydrogen desorption during epitaxial growth on Si(001)
Hu, X. F. ; Xu, Z. ; Lim, D. ; Downer, M. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The kinetics of disilane adsorption and hydrogen desorption during low-temperature, ultrahigh vacuum chemical vapor deposition on Si(001) is investigated in situ in real time by monitoring the instantaneous hydrogen coverage using optical second-harmonic generation. A simple two-site adsorption model and first-order desorption are used to establish a reactive sticking coefficient and to predict the Si(001) epitaxial growth rate. The reactive sticking coefficient is temperature independent between 740 and 920 K and equal to 0.04±0.01. Predicted growth rates are in agreement with published growth rates obtained from gas-source molecular-beam epitaxy of Si(001). © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |