Parallel epitaxy of TiN(100) thin films on Si(100) produced by pulsed reactive crossed-beam laser ablation
Timm, R. ; Willmott, P. R. ; Huber, J. R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
TiN(001)[100]||Si(001)[100] parallel epitaxy of thin films grown by pulsed reactive crossed-beam laser ablation (KrF, 248 nm) is investigated in situ by reflection high-energy electron diffraction and ex situ by x-ray diffraction, full-hemispherical X-ray photoelectron diffraction and low-energy electron diffraction. TiN films are grown on atomically flat, initially two domain 2×1 reconstructed Si(001) surfaces at 100≤T≤800° C. Parallel epitaxy is found to prevail at T≥400 °C with growth rates in the 10−2 monolayer/pulse−1 range and a repetition rate of 2 Hz. The substrate and film morphologies are investigated using atomic force microscopy. © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |