Crystal growth and fabrication of a 1.3-μm-wavelength multiple-quantum-well laser on a (211)A InP substrate

1077-3118

AIP Digital Archive

Physics

We demonstrate the fabrication of a long-wavelength laser on a (211) InP substrate, with the expectation of reducing threshold current density. We found that InGaAsP single quantum wells (SQWs) could be fabricated with good optical properties provided the SQW layers were not made too thin. A laser that had an unstrained multiple-quantum-well active layer emitting at 1.3 μm was fabricated on a (211)A InP substrate. Its threshold current density was 900 A/cm2, which is comparable to the value for the same type of laser on a (100) substrate. These results suggest that long-wavelength lasers with satisfactory quality can be fabricated on a (211)A substrate. © 1997 American Institute of Physics.

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