Photoluminescence from C+-implanted SiNxOy films grown on crystalline silicon
Liao, L. S. ; Xiong, Z. H. ; Zhou, X. ; Liu, X. B. ; Hou, X. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Carbon ions at an energy of 35 keV with a dose of 5×1016 cm−2 were implanted into SiNxOy films grown on crystalline silicon by plasma enhanced chemical vapor deposition. Intense photoluminescence (PL) peaked at about 550 nm is observed in the implanted films under an excitation of 441.6 nm laser line. The PL intensity varies with annealing temperature, and reaches a maximum at the annealing temperature of 600 °C. The luminescence may originate from the complex of Si, N, O, and C in the films. © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |