Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films
Nagao, M. ; Kondo, T. ; Gotoh, Y. ; Tsuji, H. ; Ishikawa, J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Field emission characteristics of B-doped diamond thin films terminated with oxygen and hydrogen were investigated. The diamond thin films were prepared by microwave plasma chemical vapor deposition. The dependence of emission characteristics on the surface treatment and on the B concentration was investigated. The turn-on voltage required to extract a current of 0.1 nA depended on these preparation parameters. The emitters with lower B concentration emitted electrons at a lower turn-on voltage, and the H-terminated emitters had a lower turn-on voltage than O-terminated emitters. The analysis of the slope and the intercept of Fowler–Nordheim plot revealed that the dependence of turn-on voltage on the surface treatment is due to the difference of emission barrier height, and that the dependence on B concentration is due not to the emission barrier height but to the surface morphology. © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |