High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
Fuchs, F. ; Weimer, U. ; Pletschen, W. ; Schmitz, J. ; Ahlswede, E. ; Walther, M. ; Wagner, J. ; Koidl, P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off wavelength around 8 μm show a current responsivity of 2 A/W. By proper adjustment of the p-doping level above the n-background concentration the depletion width exceeds a critical size of about 60 nm, leading to the suppression of band-to-band tunneling currents. Above that critical width the dynamic impedance R0A at 77 K reaches values above 1 kΩ cm2 leading to a Johnson-noise-limited detectivity in excess of 1×1012 cm(square root of)Hz/W. © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |