Structure and composition of the c(4×4) reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy
Han, B.-K. ; Li, L. ; Fu, Q. ; Hicks, R. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Surfaces of GaAs (001) were prepared by metalorganic vapor-phase epitaxy and characterized by scanning tunneling microscopy, x-ray photoelectron spectroscopy, infrared spectroscopy, and low-energy electron diffraction. Upon removal from the reactor, the gallium arsenide surface exhibits a (1×2) reconstruction, which is a disordered variant of the c(4×4). The disorder arises from the presence of adsorbed alkyl groups. Heating the sample to 350 °C desorbs the hydrocarbons and produces a well-ordered c(4×4) structure. A model is proposed for the alkyl-terminated (1×2) reconstruction. © 1998 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |