Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition
Mao, J. M. ; Sun, L. F. ; Qian, L. X. ; Pan, Z. W. ; Chang, B. H. ; Zhou, W. Y. ; Wang, G. ; Xie, S. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |