Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells
Meyer, J. R. ; Felix, C. L. ; Bewley, W. W. ; Vurgaftman, I. ; Aifer, E. H. ; Olafsen, L. J. ; Lindle, J. R. ; Hoffman, C. A. ; Yang, M.-J. ; Bennett, B. R. ; Shanabrook, B. V.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1–4.8 μm, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure. © 1998 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |