Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
Zhuang, Q. D. ; Li, J. M. ; Li, H. X. ; Zeng, Y. P. ; Pan, L. ; Chen, Y. H. ; Kong, M. Y. ; Lin, L. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Normal-incident infrared absorption in the 8–12-μm-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 μm is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. © 1998 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |