Interdiffusion of In and Ga in InGaN quantum wells
McCluskey, M. D. ; Romano, L. T. ; Krusor, B. S. ; Johnson, N. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Interdiffusion of In and Ga is observed in InGaN/GaN multiple quantum wells for annealing temperatures of 1300–1400 °C. Hydrostatic pressures of up to 15 kbar were applied to prevent surface decomposition. In as-grown material, x-ray diffraction spectra show InGaN diffraction peaks up to the fourth order. After annealing at 1400 °C for 15 min, only the zero-order peak is observed, as a result of compositional disordering of the quantum well superlattice. Transmission electron microscopy confirms that the superlattice is completely disordered after annealing at 1400 °C for 15 min. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |