Trapping of minority carriers in multicrystalline silicon

Macdonald, D. ; Cuevas, A.

Woodbury, NY : American Institute of Physics (AIP)
Published 1999
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Abnormally high effective carrier lifetimes have been observed in multicrystalline silicon wafers using both transient and steady-state photoconductance techniques. A simple model based on the presence of trapping centers explains this phenomenon both qualitatively and quantitatively. By fitting this model to experimental data acquired with a quasi-steady-state photoconductance technique, it is possible to determine the trap density, trap energy, and the ratio between the mean-trapping time and mean-escape time. A correlation between trap density and dislocation density in the material has been found. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL: