Trapping of minority carriers in multicrystalline silicon
ISSN: |
1077-3118
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Source: |
AIP Digital Archive
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Topics: |
Physics
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Notes: |
Abnormally high effective carrier lifetimes have been observed in multicrystalline silicon wafers using both transient and steady-state photoconductance techniques. A simple model based on the presence of trapping centers explains this phenomenon both qualitatively and quantitatively. By fitting this model to experimental data acquired with a quasi-steady-state photoconductance technique, it is possible to determine the trap density, trap energy, and the ratio between the mean-trapping time and mean-escape time. A correlation between trap density and dislocation density in the material has been found. © 1999 American Institute of Physics.
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Type of Medium: |
Electronic Resource
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URL: |