Low-resistance Ta/Ti Ohmic contacts for p-type GaN
Suzuki, Masaaki ; Kawakami, T. ; Arai, T. ; Kobayashi, S. ; Koide, Yasuo
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Although extensive efforts have continued to develop Ohmic contacts for p-type GaN, which have specific contact resistance (ρc) lower than that (ρc∼10−2 Ω cm2) of conventional Ni/Au contacts, to the best of our knowledge no breakthrough has been reported in open literature. We demonstrated that bilayered Ta/Ti contacts have a ρc value of around 3×10−5 Ω cm2 for p-type GaN with a hole concentration of 7×1017 cm−3. This contact has resistance low enough to manufacture blue laser diodes, but deterioration of the ρc value during room-temperature storage is the key issue. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |