Pulsed-laser-deposited epitaxial Sr2FeMoO6−y thin films: Positive and negative magnetoresistance regimes
Asano, H. ; Ogale, S. B. ; Garrison, J. ; Orozco, A. ; Li, Y. H. ; Li, E. ; Smolyaninova, V. ; Galley, C. ; Downes, M. ; Rajeswari, M. ; Ramesh, R. ; Venkatesan, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Epitaxial thin films of ordered double-perovskite Sr2FeMoO6−y are deposited on (001) SrTiO3 substrates by pulsed-laser deposition using a two step growth process. Selection of growth conditions is found to lead to either highly conductive metallic thin films (residual resistivity of about 1 μΩ cm) or semiconducting films. The metallic films show a positive magnetoresistance (MR) as high as 35%, while the semiconducting films show a negative MR of −3%, at a temperature of 5 K and a field of 8 T. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |