Blue emission from Tm-doped GaN electroluminescent devices
Steckl, A. J. ; Garter, M. ; Lee, D. S. ; Heikenfeld, J. ; Birkhahn, R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Blue emission has been obtained at room temperature from Tm-doped GaN electroluminescent devices. The GaN was grown by molecular beam epitaxy on Si(111) substrates using solid sources (for Ga and Tm) and a plasma source for N2. Indium–tin–oxide was deposited on the GaN layer and patterned to provide both the bias (small area) and ground (large area) transparent electrodes. Strong blue light emission under the bias electrode was observable with the naked eye at room temperature. The visible emission spectrum consists of a main contribution in the blue region at 477 nm corresponding to the Tm transition from the 1G4 to the 3H6 ground state. A strong near-infrared peak was also observed at 802 nm. The relative blue emission efficiency was found to increase linearly with bias voltage and current beyond certain turn-on levels. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289606843564034 |
|---|---|
| autor | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. |
| autorsonst | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. |
| book_url | http://dx.doi.org/10.1063/1.124958 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218074530 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Blue emission has been obtained at room temperature from Tm-doped GaN electroluminescent devices. The GaN was grown by molecular beam epitaxy on Si(111) substrates using solid sources (for Ga and Tm) and a plasma source for N2. Indium–tin–oxide was deposited on the GaN layer and patterned to provide both the bias (small area) and ground (large area) transparent electrodes. Strong blue light emission under the bias electrode was observable with the naked eye at room temperature. The visible emission spectrum consists of a main contribution in the blue region at 477 nm corresponding to the Tm transition from the 1G4 to the 3H6 ground state. A strong near-infrared peak was also observed at 802 nm. The relative blue emission efficiency was found to increase linearly with bias voltage and current beyond certain turn-on levels. © 1999 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1999 |
| publikationsjahr_facette | 1999 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1999 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 75 (1999), S. 2184-2186 |
| search_space | articles |
| shingle_author_1 | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. |
| shingle_author_2 | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. |
| shingle_author_3 | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. |
| shingle_author_4 | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. |
| shingle_catch_all_1 | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. Blue emission from Tm-doped GaN electroluminescent devices Blue emission has been obtained at room temperature from Tm-doped GaN electroluminescent devices. The GaN was grown by molecular beam epitaxy on Si(111) substrates using solid sources (for Ga and Tm) and a plasma source for N2. Indium–tin–oxide was deposited on the GaN layer and patterned to provide both the bias (small area) and ground (large area) transparent electrodes. Strong blue light emission under the bias electrode was observable with the naked eye at room temperature. The visible emission spectrum consists of a main contribution in the blue region at 477 nm corresponding to the Tm transition from the 1G4 to the 3H6 ground state. A strong near-infrared peak was also observed at 802 nm. The relative blue emission efficiency was found to increase linearly with bias voltage and current beyond certain turn-on levels. © 1999 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. Blue emission from Tm-doped GaN electroluminescent devices Blue emission has been obtained at room temperature from Tm-doped GaN electroluminescent devices. The GaN was grown by molecular beam epitaxy on Si(111) substrates using solid sources (for Ga and Tm) and a plasma source for N2. Indium–tin–oxide was deposited on the GaN layer and patterned to provide both the bias (small area) and ground (large area) transparent electrodes. Strong blue light emission under the bias electrode was observable with the naked eye at room temperature. The visible emission spectrum consists of a main contribution in the blue region at 477 nm corresponding to the Tm transition from the 1G4 to the 3H6 ground state. A strong near-infrared peak was also observed at 802 nm. The relative blue emission efficiency was found to increase linearly with bias voltage and current beyond certain turn-on levels. © 1999 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. Blue emission from Tm-doped GaN electroluminescent devices Blue emission has been obtained at room temperature from Tm-doped GaN electroluminescent devices. The GaN was grown by molecular beam epitaxy on Si(111) substrates using solid sources (for Ga and Tm) and a plasma source for N2. Indium–tin–oxide was deposited on the GaN layer and patterned to provide both the bias (small area) and ground (large area) transparent electrodes. Strong blue light emission under the bias electrode was observable with the naked eye at room temperature. The visible emission spectrum consists of a main contribution in the blue region at 477 nm corresponding to the Tm transition from the 1G4 to the 3H6 ground state. A strong near-infrared peak was also observed at 802 nm. The relative blue emission efficiency was found to increase linearly with bias voltage and current beyond certain turn-on levels. © 1999 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Steckl, A. J. Garter, M. Lee, D. S. Heikenfeld, J. Birkhahn, R. Blue emission from Tm-doped GaN electroluminescent devices Blue emission has been obtained at room temperature from Tm-doped GaN electroluminescent devices. The GaN was grown by molecular beam epitaxy on Si(111) substrates using solid sources (for Ga and Tm) and a plasma source for N2. Indium–tin–oxide was deposited on the GaN layer and patterned to provide both the bias (small area) and ground (large area) transparent electrodes. Strong blue light emission under the bias electrode was observable with the naked eye at room temperature. The visible emission spectrum consists of a main contribution in the blue region at 477 nm corresponding to the Tm transition from the 1G4 to the 3H6 ground state. A strong near-infrared peak was also observed at 802 nm. The relative blue emission efficiency was found to increase linearly with bias voltage and current beyond certain turn-on levels. © 1999 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Blue emission from Tm-doped GaN electroluminescent devices |
| shingle_title_2 | Blue emission from Tm-doped GaN electroluminescent devices |
| shingle_title_3 | Blue emission from Tm-doped GaN electroluminescent devices |
| shingle_title_4 | Blue emission from Tm-doped GaN electroluminescent devices |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:30.655Z |
| titel | Blue emission from Tm-doped GaN electroluminescent devices |
| titel_suche | Blue emission from Tm-doped GaN electroluminescent devices |
| topic | U |
| uid | nat_lic_papers_NLZ218074530 |