Quantum-well width dependence of threshold current density in InGaN lasers

Chow, W. W.

Woodbury, NY : American Institute of Physics (AIP)
Published 1999
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The quantum-confined Stark effect was found to result in a strong quantum-well width dependence of threshold current density in strained group-III nitride quantum well lasers. For an In0.2Ga0.8N/GaN structure with quantum-well width in the neighborhood of 3.5 nm, our analysis shows that the reduction in spontaneous emission loss by the electron–hole spatial separation outweighs the corresponding reduction in gain to produce a threshold current-density minimum. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL: