Room-temperature electroluminescence from erbium-doped porous silicon
Lopez, Herman A. ; Fauchet, Philippe M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
We demonstrate stable room-temperature electroluminescence (EL) at 1.54 μm from erbium-doped porous silicon devices under both forward- and reverse-bias conditions. Erbium was infiltrated in the pores (≤1019 cm−3) by cathodic electrochemical migration of the ions followed by high-temperature annealing (950–1100 °C) in an oxygen and nitrogen environment. The devices exhibit an exponential EL dependence in both bias conditions as a function of input power. In reverse bias, the external quantum efficiency reaches 0.01%. The EL intensity decreases by a factor of 24 for reverse bias and 2.6 for forward bias when the temperature increases from 240 to 300 K. The different device characteristics in forward and reverse biases suggest that different excitation mechanisms are responsible for EL. © 1999 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289606872924160 |
|---|---|
| autor | Lopez, Herman A. Fauchet, Philippe M. |
| autorsonst | Lopez, Herman A. Fauchet, Philippe M. |
| book_url | http://dx.doi.org/10.1063/1.125515 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218068980 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | We demonstrate stable room-temperature electroluminescence (EL) at 1.54 μm from erbium-doped porous silicon devices under both forward- and reverse-bias conditions. Erbium was infiltrated in the pores (≤1019 cm−3) by cathodic electrochemical migration of the ions followed by high-temperature annealing (950–1100 °C) in an oxygen and nitrogen environment. The devices exhibit an exponential EL dependence in both bias conditions as a function of input power. In reverse bias, the external quantum efficiency reaches 0.01%. The EL intensity decreases by a factor of 24 for reverse bias and 2.6 for forward bias when the temperature increases from 240 to 300 K. The different device characteristics in forward and reverse biases suggest that different excitation mechanisms are responsible for EL. © 1999 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1999 |
| publikationsjahr_facette | 1999 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1999 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 75 (1999), S. 3989-3991 |
| search_space | articles |
| shingle_author_1 | Lopez, Herman A. Fauchet, Philippe M. |
| shingle_author_2 | Lopez, Herman A. Fauchet, Philippe M. |
| shingle_author_3 | Lopez, Herman A. Fauchet, Philippe M. |
| shingle_author_4 | Lopez, Herman A. Fauchet, Philippe M. |
| shingle_catch_all_1 | Lopez, Herman A. Fauchet, Philippe M. Room-temperature electroluminescence from erbium-doped porous silicon We demonstrate stable room-temperature electroluminescence (EL) at 1.54 μm from erbium-doped porous silicon devices under both forward- and reverse-bias conditions. Erbium was infiltrated in the pores (≤1019 cm−3) by cathodic electrochemical migration of the ions followed by high-temperature annealing (950–1100 °C) in an oxygen and nitrogen environment. The devices exhibit an exponential EL dependence in both bias conditions as a function of input power. In reverse bias, the external quantum efficiency reaches 0.01%. The EL intensity decreases by a factor of 24 for reverse bias and 2.6 for forward bias when the temperature increases from 240 to 300 K. The different device characteristics in forward and reverse biases suggest that different excitation mechanisms are responsible for EL. © 1999 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Lopez, Herman A. Fauchet, Philippe M. Room-temperature electroluminescence from erbium-doped porous silicon We demonstrate stable room-temperature electroluminescence (EL) at 1.54 μm from erbium-doped porous silicon devices under both forward- and reverse-bias conditions. Erbium was infiltrated in the pores (≤1019 cm−3) by cathodic electrochemical migration of the ions followed by high-temperature annealing (950–1100 °C) in an oxygen and nitrogen environment. The devices exhibit an exponential EL dependence in both bias conditions as a function of input power. In reverse bias, the external quantum efficiency reaches 0.01%. The EL intensity decreases by a factor of 24 for reverse bias and 2.6 for forward bias when the temperature increases from 240 to 300 K. The different device characteristics in forward and reverse biases suggest that different excitation mechanisms are responsible for EL. © 1999 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Lopez, Herman A. Fauchet, Philippe M. Room-temperature electroluminescence from erbium-doped porous silicon We demonstrate stable room-temperature electroluminescence (EL) at 1.54 μm from erbium-doped porous silicon devices under both forward- and reverse-bias conditions. Erbium was infiltrated in the pores (≤1019 cm−3) by cathodic electrochemical migration of the ions followed by high-temperature annealing (950–1100 °C) in an oxygen and nitrogen environment. The devices exhibit an exponential EL dependence in both bias conditions as a function of input power. In reverse bias, the external quantum efficiency reaches 0.01%. The EL intensity decreases by a factor of 24 for reverse bias and 2.6 for forward bias when the temperature increases from 240 to 300 K. The different device characteristics in forward and reverse biases suggest that different excitation mechanisms are responsible for EL. © 1999 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Lopez, Herman A. Fauchet, Philippe M. Room-temperature electroluminescence from erbium-doped porous silicon We demonstrate stable room-temperature electroluminescence (EL) at 1.54 μm from erbium-doped porous silicon devices under both forward- and reverse-bias conditions. Erbium was infiltrated in the pores (≤1019 cm−3) by cathodic electrochemical migration of the ions followed by high-temperature annealing (950–1100 °C) in an oxygen and nitrogen environment. The devices exhibit an exponential EL dependence in both bias conditions as a function of input power. In reverse bias, the external quantum efficiency reaches 0.01%. The EL intensity decreases by a factor of 24 for reverse bias and 2.6 for forward bias when the temperature increases from 240 to 300 K. The different device characteristics in forward and reverse biases suggest that different excitation mechanisms are responsible for EL. © 1999 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Room-temperature electroluminescence from erbium-doped porous silicon |
| shingle_title_2 | Room-temperature electroluminescence from erbium-doped porous silicon |
| shingle_title_3 | Room-temperature electroluminescence from erbium-doped porous silicon |
| shingle_title_4 | Room-temperature electroluminescence from erbium-doped porous silicon |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:30.428Z |
| titel | Room-temperature electroluminescence from erbium-doped porous silicon |
| titel_suche | Room-temperature electroluminescence from erbium-doped porous silicon |
| topic | U |
| uid | nat_lic_papers_NLZ218068980 |