Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Romano, L. T. ; McCluskey, M. D. ; Van de Walle, C. G. ; Northrup, J. E. ; Bour, D. P. ; Kneissl, M.

Woodbury, NY : American Institute of Physics (AIP)
Published 1999
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Phase separation was found to occur in In0.33Ga0.67N/GaN multiple-quantum-well structures after annealing at 975 °C in a hydrostatic pressure of 5 kbar N2 for 4 h. X-ray diffraction (XRD) spectra of the as-grown samples showed superlattice peaks that were replaced by a broad, single-phase peak after annealing. Transmission electron microscopy (TEM) images of the annealed samples show In-rich precipitates and voids that are found only within the quantum-well region. Both TEM and XRD measurements indicated that the formation of voids and second phases were suppressed after annealing in a hydrostatic pressure of 15 kbar. In addition, optical absorption measurements on these samples showed no indication of a peak at 2.65 eV that was observed in previous annealing studies. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL: