Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films
Bu, S. D. ; Park, B. H. ; Kang, B. S. ; Kang, S. H. ; Noh, T. W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition. By adjusting the laser fluence, we could successfully control remnant polarization of the films. In a narrow fluence range of 1.0–1.5 J/cm2, films with large remnant polarizations (as high as 18.7 μC/cm2) could be obtained. The choice of an optimal laser fluence was found to be very important to control electrical properties of the films. From electron-probe microanalysis, it was demonstrated that the Bi content is closely related with the remnant polarization. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |