Intersubband transitions in GaAs coupled-quantum-wells for use as a tunable detector at THz frequencies
Tomlinson, A. M. ; Chang, C. C. ; Stone, R. J. ; Nicholas, R. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We demonstrate a detection mechanism for 2–5 THz radiation using intersubband transitions between anticrossing electron levels in a GaAs/AlGaAs coupled-quantum-well photodiode. The THz radiation is detected as a modulation in the photocurrent generated by a visible laser. This modulation is caused by carrier heating effects due to absorption of energy by intersubband transitions. Since the frequency of the intersubband transitions varies with the electric-field strength, the device can function as a voltage-tunable THz detector. © 2000 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |