Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing
Hsu, T. M. ; Lan, Y. S. ; Chang, W.-H.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. © 2000 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289603642261505 |
|---|---|
| autor | Hsu, T. M. Lan, Y. S. Chang, W.-H. |
| autorsonst | Hsu, T. M. Lan, Y. S. Chang, W.-H. |
| book_url | http://dx.doi.org/10.1063/1.125863 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ21805355X |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. © 2000 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 2000 |
| publikationsjahr_facette | 2000 |
| publikationsjahr_intervall | 7999:2000-2004 |
| publikationsjahr_sort | 2000 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 76 (2000), S. 691-693 |
| search_space | articles |
| shingle_author_1 | Hsu, T. M. Lan, Y. S. Chang, W.-H. |
| shingle_author_2 | Hsu, T. M. Lan, Y. S. Chang, W.-H. |
| shingle_author_3 | Hsu, T. M. Lan, Y. S. Chang, W.-H. |
| shingle_author_4 | Hsu, T. M. Lan, Y. S. Chang, W.-H. |
| shingle_catch_all_1 | Hsu, T. M. Lan, Y. S. Chang, W.-H. Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. © 2000 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Hsu, T. M. Lan, Y. S. Chang, W.-H. Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. © 2000 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Hsu, T. M. Lan, Y. S. Chang, W.-H. Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. © 2000 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Hsu, T. M. Lan, Y. S. Chang, W.-H. Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. © 2000 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| shingle_title_2 | Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| shingle_title_3 | Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| shingle_title_4 | Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:28.032Z |
| titel | Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| titel_suche | Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| topic | U |
| uid | nat_lic_papers_NLZ21805355X |