Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules
Boucaud, P. ; Gill, K. S. ; Williams, J. B. ; Sherwin, M. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have investigated the far-infrared absorption in InAs/GaAs quantum dot molecules. The quantum dot molecules consist of two vertically coupled InAs self-assembled quantum dots separated by a GaAs barrier. The electronic coupling between the dot states results in an intraband absorption at THz frequencies. We show that this absorption can be bleached under high excitation intensity delivered by a free-electron laser. The saturation intensity is found to be on the order of 1 W cm−2. The electron relaxation time T1 is estimated from the saturation intensity. A lower limit for T1 of the order of 30 ps is deduced. © 2000 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |