Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties
Lin, A. ; Hong, X. ; Wood, V. ; Verevkin, A. A. ; Ahn, C. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have demonstrated a route to epitaxial Pb(Zr0.2Ti0.8)O3 on (001) Si that exhibits a uniform piezoelectric response down to nanoscale levels through the utilization of an insulating, single-crystalline SrTiO3 transition layer. These structures, which were grown by a combination of molecular-beam epitaxy and off-axis magnetron sputtering, have a surface roughness of 〈5 Å, with piezoelectric microscopy measurements revealing a piezoelectric coefficient of ∼50 pm/V that is switchable down to sub-100-nm dimensions. © 2001 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |