Phase-field model of domain structures in ferroelectric thin films

Li, Y. L. ; Hu, S. Y. ; Liu, Z. K. ; Chen, L. Q.

Woodbury, NY : American Institute of Physics (AIP)
Published 2001
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A phase-field model for predicting the coherent microstructure evolution in constrained thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. The domain structure evolution during a cubic→tetragonal proper ferroelectric phase transition is studied. It is shown that the model is able to simultaneously predict the effects of substrate constraint and temperature on the volume fractions of domain variants, domain-wall orientations, domain shapes, and their temporal evolution. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
_version_ 1798289601503166464
autor Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
autorsonst Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
book_url http://dx.doi.org/10.1063/1.1377855
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLZ218029276
issn 1077-3118
journal_name Applied Physics Letters
materialart 1
notes A phase-field model for predicting the coherent microstructure evolution in constrained thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. The domain structure evolution during a cubic→tetragonal proper ferroelectric phase transition is studied. It is shown that the model is able to simultaneously predict the effects of substrate constraint and temperature on the volume fractions of domain variants, domain-wall orientations, domain shapes, and their temporal evolution. © 2001 American Institute of Physics.
package_name American Institute of Physics (AIP)
publikationsjahr_anzeige 2001
publikationsjahr_facette 2001
publikationsjahr_intervall 7999:2000-2004
publikationsjahr_sort 2001
publikationsort Woodbury, NY
publisher American Institute of Physics (AIP)
reference 78 (2001), S. 3878-3880
search_space articles
shingle_author_1 Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
shingle_author_2 Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
shingle_author_3 Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
shingle_author_4 Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
shingle_catch_all_1 Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
Phase-field model of domain structures in ferroelectric thin films
A phase-field model for predicting the coherent microstructure evolution in constrained thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. The domain structure evolution during a cubic→tetragonal proper ferroelectric phase transition is studied. It is shown that the model is able to simultaneously predict the effects of substrate constraint and temperature on the volume fractions of domain variants, domain-wall orientations, domain shapes, and their temporal evolution. © 2001 American Institute of Physics.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_2 Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
Phase-field model of domain structures in ferroelectric thin films
A phase-field model for predicting the coherent microstructure evolution in constrained thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. The domain structure evolution during a cubic→tetragonal proper ferroelectric phase transition is studied. It is shown that the model is able to simultaneously predict the effects of substrate constraint and temperature on the volume fractions of domain variants, domain-wall orientations, domain shapes, and their temporal evolution. © 2001 American Institute of Physics.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_3 Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
Phase-field model of domain structures in ferroelectric thin films
A phase-field model for predicting the coherent microstructure evolution in constrained thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. The domain structure evolution during a cubic→tetragonal proper ferroelectric phase transition is studied. It is shown that the model is able to simultaneously predict the effects of substrate constraint and temperature on the volume fractions of domain variants, domain-wall orientations, domain shapes, and their temporal evolution. © 2001 American Institute of Physics.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_4 Li, Y. L.
Hu, S. Y.
Liu, Z. K.
Chen, L. Q.
Phase-field model of domain structures in ferroelectric thin films
A phase-field model for predicting the coherent microstructure evolution in constrained thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. The domain structure evolution during a cubic→tetragonal proper ferroelectric phase transition is studied. It is shown that the model is able to simultaneously predict the effects of substrate constraint and temperature on the volume fractions of domain variants, domain-wall orientations, domain shapes, and their temporal evolution. © 2001 American Institute of Physics.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_title_1 Phase-field model of domain structures in ferroelectric thin films
shingle_title_2 Phase-field model of domain structures in ferroelectric thin films
shingle_title_3 Phase-field model of domain structures in ferroelectric thin films
shingle_title_4 Phase-field model of domain structures in ferroelectric thin films
sigel_instance_filter dkfz
geomar
wilbert
ipn
albert
source_archive AIP Digital Archive
timestamp 2024-05-06T08:03:26.212Z
titel Phase-field model of domain structures in ferroelectric thin films
titel_suche Phase-field model of domain structures in ferroelectric thin films
topic U
uid nat_lic_papers_NLZ218029276