Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies
Kim, Bosang S. ; Kuskovsky, Igor L. ; Tian, C. ; Herman, Irving P. ; Neumark, G. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have studied undoped Zn1−xBexSe alloys grown by molecular beam epitaxy by photoluminescence (PL) as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep, between 40 and 50 meV. We have also shown that the temperature and pressure dependences of the Zn1−xBexSe PL are close to those of ZnSe. From this we conclude that the dominant excitonic recombination is of an "effective mass" type. © 2001 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289601435009025 |
|---|---|
| autor | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. |
| autorsonst | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. |
| book_url | http://dx.doi.org/10.1063/1.1381039 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ21802830X |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | We have studied undoped Zn1−xBexSe alloys grown by molecular beam epitaxy by photoluminescence (PL) as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep, between 40 and 50 meV. We have also shown that the temperature and pressure dependences of the Zn1−xBexSe PL are close to those of ZnSe. From this we conclude that the dominant excitonic recombination is of an "effective mass" type. © 2001 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 2001 |
| publikationsjahr_facette | 2001 |
| publikationsjahr_intervall | 7999:2000-2004 |
| publikationsjahr_sort | 2001 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 78 (2001), S. 4151-4153 |
| search_space | articles |
| shingle_author_1 | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. |
| shingle_author_2 | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. |
| shingle_author_3 | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. |
| shingle_author_4 | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. |
| shingle_catch_all_1 | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies We have studied undoped Zn1−xBexSe alloys grown by molecular beam epitaxy by photoluminescence (PL) as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep, between 40 and 50 meV. We have also shown that the temperature and pressure dependences of the Zn1−xBexSe PL are close to those of ZnSe. From this we conclude that the dominant excitonic recombination is of an "effective mass" type. © 2001 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies We have studied undoped Zn1−xBexSe alloys grown by molecular beam epitaxy by photoluminescence (PL) as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep, between 40 and 50 meV. We have also shown that the temperature and pressure dependences of the Zn1−xBexSe PL are close to those of ZnSe. From this we conclude that the dominant excitonic recombination is of an "effective mass" type. © 2001 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies We have studied undoped Zn1−xBexSe alloys grown by molecular beam epitaxy by photoluminescence (PL) as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep, between 40 and 50 meV. We have also shown that the temperature and pressure dependences of the Zn1−xBexSe PL are close to those of ZnSe. From this we conclude that the dominant excitonic recombination is of an "effective mass" type. © 2001 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Kim, Bosang S. Kuskovsky, Igor L. Tian, C. Herman, Irving P. Neumark, G. F. Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies We have studied undoped Zn1−xBexSe alloys grown by molecular beam epitaxy by photoluminescence (PL) as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep, between 40 and 50 meV. We have also shown that the temperature and pressure dependences of the Zn1−xBexSe PL are close to those of ZnSe. From this we conclude that the dominant excitonic recombination is of an "effective mass" type. © 2001 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies |
| shingle_title_2 | Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies |
| shingle_title_3 | Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies |
| shingle_title_4 | Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:26.212Z |
| titel | Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies |
| titel_suche | Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies |
| topic | U |
| uid | nat_lic_papers_NLZ21802830X |