Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si
Brusa, R. S. ; Deng, W. ; Karwasz, G. P. ; Zecca, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report the direct measurement of vacancy-like defects related to oxygen in the oxygen precipitation process in Czochralski Si. The vacancy-like defects were detected by measuring the positron lifetime and narrowing of the positron–electron annihilation momentum distribution. Oxygen atoms surrounding the vacancy-like defects were detected by analyzing the high-momentum part of the positron–electron momentum distribution measured by a Doppler broadening coincidence technique. It was found that the majority of the defects associated with oxygen have an effective open volume smaller than that of a silicon monovacancy. © 2001 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |