Enabling electron diffraction as a tool for determining substrate temperature and surface morphology
LaBella, V. P. ; Bullock, D. W. ; Emery, C. ; Ding, Z. ; Thibado, P. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The reconstruction transitions for the GaAs(001) surface have been identified as a function of the band gap-derived substrate temperature and As4 beam equivalent pressure. Surface morphology measurements using in situ scanning tunneling microscopy reveal that the surface spontaneously forms a random distribution of two-dimensional islands. The onset of island formation is coincident with the reflected high-energy electron diffraction pattern changing from the β to α subphase of the (2×4) reconstruction. An electron diffraction-based method for determining the substrate temperature and engineering the surface morphology with a desired amount of roughness is presented. © 2001 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |