Local structure of implanted B in amorphous Si

Mai, F. ; Ittermann, B. ; Füllgrabe, M. ; Heemeier, M. ; Kroll, F. ; Marbach, K. ; Meier, P. ; Mell, H. ; Peters, D. ; Thieß, H. ; Ackermann, H. ; Stöckmann, H.-J.

Woodbury, NY : American Institute of Physics (AIP)
Published 2001
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
12B probe nuclei are implanted in amorphous Si and monitored by β-radiation-detected nuclear magnetic resonance (β-NMR). Independently of growth conditions and impurity content, we find the same frequency distribution in a variety of samples. This is interpreted as an intrinsic signature of the amorphous environment while preferential B–H pairing is not observed. Comparing our data with earlier 11B-NMR work, we find the local B configuration to be completely controlled by the incorporation process. In our low-dose implantation experiment, all B is fourfold coordinated and electrically active. This is in contrast to gas-phase doping or high-dose implantation where the threefold coordination prevails. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL: