Local structure of implanted B in amorphous Si
Mai, F. ; Ittermann, B. ; Füllgrabe, M. ; Heemeier, M. ; Kroll, F. ; Marbach, K. ; Meier, P. ; Mell, H. ; Peters, D. ; Thieß, H. ; Ackermann, H. ; Stöckmann, H.-J.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
Woodbury, NY : American Institute of Physics (AIP)
Published 2001
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
12B probe nuclei are implanted in amorphous Si and monitored by β-radiation-detected nuclear magnetic resonance (β-NMR). Independently of growth conditions and impurity content, we find the same frequency distribution in a variety of samples. This is interpreted as an intrinsic signature of the amorphous environment while preferential B–H pairing is not observed. Comparing our data with earlier 11B-NMR work, we find the local B configuration to be completely controlled by the incorporation process. In our low-dose implantation experiment, all B is fourfold coordinated and electrically active. This is in contrast to gas-phase doping or high-dose implantation where the threefold coordination prevails. © 2001 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |