Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289599087247360 |
|---|---|
| autor | Grill, A. Patel, V. |
| autorsonst | Grill, A. Patel, V. |
| book_url | http://dx.doi.org/10.1063/1.1392976 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218012020 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 2001 |
| publikationsjahr_facette | 2001 |
| publikationsjahr_intervall | 7999:2000-2004 |
| publikationsjahr_sort | 2001 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 79 (2001), S. 803-805 |
| search_space | articles |
| shingle_author_1 | Grill, A. Patel, V. |
| shingle_author_2 | Grill, A. Patel, V. |
| shingle_author_3 | Grill, A. Patel, V. |
| shingle_author_4 | Grill, A. Patel, V. |
| shingle_catch_all_1 | Grill, A. Patel, V. Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Grill, A. Patel, V. Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Grill, A. Patel, V. Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Grill, A. Patel, V. Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition |
| shingle_title_2 | Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition |
| shingle_title_3 | Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition |
| shingle_title_4 | Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:22.914Z |
| titel | Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition |
| titel_suche | Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition |
| topic | U |
| uid | nat_lic_papers_NLZ218012020 |