Boron carbonitride nanojunctions
Guo, J. D. ; Zhi, C. Y. ; Bai, X. D. ; Wang, E. G.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002
Woodbury, NY : American Institute of Physics (AIP)
Published 2002
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289598885920768 |
|---|---|
| autor | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. |
| autorsonst | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. |
| book_url | http://dx.doi.org/10.1063/1.1431692 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218009577 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 2002 |
| publikationsjahr_facette | 2002 |
| publikationsjahr_intervall | 7999:2000-2004 |
| publikationsjahr_sort | 2002 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 80 (2002), S. 124-126 |
| search_space | articles |
| shingle_author_1 | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. |
| shingle_author_2 | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. |
| shingle_author_3 | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. |
| shingle_author_4 | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. |
| shingle_catch_all_1 | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. Boron carbonitride nanojunctions Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. Boron carbonitride nanojunctions Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. Boron carbonitride nanojunctions Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Guo, J. D. Zhi, C. Y. Bai, X. D. Wang, E. G. Boron carbonitride nanojunctions Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Boron carbonitride nanojunctions |
| shingle_title_2 | Boron carbonitride nanojunctions |
| shingle_title_3 | Boron carbonitride nanojunctions |
| shingle_title_4 | Boron carbonitride nanojunctions |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:22.922Z |
| titel | Boron carbonitride nanojunctions |
| titel_suche | Boron carbonitride nanojunctions |
| topic | U |
| uid | nat_lic_papers_NLZ218009577 |