Creation and suppression of point defects through a kick-out substitution process of Fe in InP
Zhao, Y. W. ; Dong, H. W. ; Chen, Y. H. ; Zhang, Y. H. ; Jiao, J. H. ; Zhao, J. Q. ; Lin, L. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002
Woodbury, NY : American Institute of Physics (AIP)
Published 2002
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Indium antisite defect InP-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The InP defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. © 2002 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |