Electronic characterization of n-ScN/p+ Si heterojunctions
Perjeru, F. ; Bai, X. ; Kordesch, M. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002
Woodbury, NY : American Institute of Physics (AIP)
Published 2002
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
We report the electronic characterization of n-ScN in heterojunctions, including deep level transient spectroscopy of electrically active deep levels. ScN material has been grown by plasma assisted physical vapor deposition on commercial p+ Si substrates. Current–voltage and capacitance–voltage measurements indicate that the built-in voltages for the heterojunctions used in this study are approximately 1.74 and 0.40 eV, as seen by electrons and holes. Deep level transient spectroscopy results show the presence of an electronic trap with activation energy EC−ET=0.51 eV. The trap has a higher concentration (1.2–1.6×1013 cm−3) closer to the ScN/Si interface. © 2002 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |