Dielectric response and structural properties of TiO2-doped Ba0.6Sr0.4TiO3 films
Jia, Q. X. ; Park, B. H. ; Gibbons, B. J. ; Huang, J. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002
Woodbury, NY : American Institute of Physics (AIP)
Published 2002
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Dielectric Ba0.6Sr0.4TiO3 films doped with different weight percentages of TiO2 were deposited by pulsed-laser deposition. The dielectric constant, dielectric loss, and the dielectric tunability of the films were found to be a strong function of the weight ratio of TiO2/Ba0.6Sr0.4TiO3. Compared to the pure Ba0.6Sr0.4TiO3, the TiO2-doped Ba0.6Sr0.4TiO3 exhibits lower dielectric loss while maintaining a significantly adjustable dielectric constant and desirable capacitance tunability. The change of the dielectric properties of TiO2-doped Ba0.6Sr0.4TiO3 films is closely related to the change in microstructure of the films as revealed by transmission electron microscopy. © 2002 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |