Interfacial structure of epitaxial MgB2 thin films grown on (0001) sapphire
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The microstructure and interfacial atomic structure of MgB2 thin films fabricated on the (0001) Al2O3 substrate were characterized by transmission electron microscopy. It was found that the MgB2 films grow epitaxially on the substrate with an orientation relationship with respect to the substrate as: (0001)MgB2(parallel)(0001)Al2O3 and [112¯0]MgB2(parallel)[101¯0]Al2O3. At the film/substrate interface, both MgO and MgAl2O4 phases were observed, which also grow epitaxially on the (0001) Al2O3 substrate. The formation of these intermediate phases is ascribed to the existence of oxygen during the annealing. © 2002 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |